Laser field effect on self-polarization of a donor impurity in a finite Ga1?xAlxAs/GaAs quantum well
Küçük Resim Yok
Tarih
2021
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The self-polarization and donor binding energy are calculated for a square Ga1?xAlxAs/GaAs quantum well under an laser field. The donor binding energy and self-polarization are obtained as a function of the laser field parameter, donor impurity position and quantum well-width. The calculations are made by means of variational and finite differences methods using the effective-mass approximation. Our results show that the laser field has remarkable effect on the self-polarization and donor binding energy. These results can be useful for studies on the electronic and optical properties of a quantum well under the influence of a laser field.
Açıklama
Anahtar Kelimeler
Quantum We L L, Laser Field, Donor Impurity, Bind I N G Energy, Self-Polarization, Variational Methods, Binding-Energy, Electric-Field, Hydrostatic-Pressure, Intersubband Transitions, Intense, Square, Dots, Wires, Polarizability, Absorption
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
609
