Hydrostatic pressure effects on impurity states in GaAs/AlAs quantum wells

dc.contributor.authorAkbas, H.
dc.contributor.authorErdogan, I.
dc.contributor.authorAkankan, O.
dc.date.accessioned2024-06-12T11:13:16Z
dc.date.available2024-06-12T11:13:16Z
dc.date.issued2011
dc.departmentTrakya Üniversitesien_US
dc.description.abstractWithin the framework of effective-mass approximation, we have studied the effects of hydrostatic pressure on the binding energy of a shallow donor impurity in an infinite quantum well by means of a variational method. It is found that the first derivative of the binding energy and energy shift is reliable parameter for describing the structure. (C) 2011 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.spmi.2011.05.006
dc.identifier.endpage89en_US
dc.identifier.issn0749-6036
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-79958799325en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage80en_US
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2011.05.006
dc.identifier.urihttps://hdl.handle.net/20.500.14551/23487
dc.identifier.volume50en_US
dc.identifier.wosWOS:000292855100009en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherAcademic Press Ltd- Elsevier Science Ltden_US
dc.relation.ispartofSuperlattices And Microstructuresen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuantum Wellen_US
dc.subjectDonor Impurityen_US
dc.subjectHydrostatic Pressureen_US
dc.subjectBinding Energyen_US
dc.subjectApplied Electric-Fielden_US
dc.subjectBinding-Energiesen_US
dc.subjectDonor Impurityen_US
dc.subjectTransitionen_US
dc.subjectGaasen_US
dc.subjectDependenceen_US
dc.subjectStressen_US
dc.titleHydrostatic pressure effects on impurity states in GaAs/AlAs quantum wellsen_US
dc.typeArticleen_US

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