Electronic band structures of Te-doped GaN nanowires
Küçük Resim Yok
Tarih
2017
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, we investigate electronic band structures of Te-doped GaN nanowires with three different radii using the first principles methods, which is based on the density functional theory. The relaxed structures, total energies and electronic band structures of pure and Te-doped GaN nanowires are calculated. The results show that the energy band gap values reduce when GaN nanowires are doped with a Te atom. While the band gap values of pure GaN nanowires increase with increasing nanowire radius, they present a decrease for Te-doped GaN nanowires. (C) 2016 Elsevier Ltd. All rights reserved.
Açıklama
7th International Conference on Advanced Nanomaterials (ANM) -- JUL 25-27, 2016 -- Univ Aveiro, Aveiro, PORTUGAL
Anahtar Kelimeler
Gan Nanowires, Doping, Electronic Properties, First Principles Method
Kaynak
Materials Today-Proceedings
WoS Q Değeri
N/A
Scopus Q Değeri
Q2
Cilt
4
Sayı
11
