An interface study of c-BP/c-GaN heterostructure

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dc.contributor.authorOzkisi, H.
dc.contributor.authorKiragasi, A.
dc.contributor.authorDalgic, S.
dc.date.accessioned2024-06-12T10:55:25Z
dc.date.available2024-06-12T10:55:25Z
dc.date.issued2011
dc.departmentTrakya Üniversitesien_US
dc.description.abstractWe present the modeled a superlattice for cubic-GaN on BP structure at (001) direction. The modeling procedure was achieved by using first principle calculations based on the density functional theory with Plane Wave Self Consistent Field. We also report the total energy of ground state, lattice constant, electronic band structure and potential energy line up of heterojunction between c-BP/c-GaN compounds. The effects of interface have been investigated in this system.en_US
dc.identifier.endpage1509en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue11-12en_US
dc.identifier.scopus2-s2.0-84855509077en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage1507en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14551/19402
dc.identifier.volume13en_US
dc.identifier.wosWOS:000298834200029en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal Of Optoelectronics And Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBulk Heterostructureen_US
dc.subjectMacroscopic Averageen_US
dc.subjectBand Structureen_US
dc.subjectInterfaceen_US
dc.subjectOptical-Propertiesen_US
dc.titleAn interface study of c-BP/c-GaN heterostructureen_US
dc.typeArticleen_US

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