Sneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memories

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dc.authoridKARAKULAK, Ertugrul/0000-0001-5937-2114
dc.authoridMutlu, Resat/0000-0003-0030-7136
dc.authorwosidMutlu, Resat/ABA-5309-2020
dc.authorwosidKARAKULAK, Ertugrul/ABA-5752-2020
dc.authorwosidUçar, Erdem/G-6929-2014
dc.contributor.authorKarakulak, Ertugrul
dc.contributor.authorMutlu, Resat
dc.contributor.authorUcar, Erdem
dc.date.accessioned2024-06-12T10:58:12Z
dc.date.available2024-06-12T10:58:12Z
dc.date.issued2014
dc.departmentTrakya Üniversitesien_US
dc.description.abstractSneak path currents of resistive memories is an important issue. They increase with increasing memory size and should be minimized for a usable resistive memory. The complementary resistive cells have been suggested as an alternative to one-cell resistive memories to decrease leakage currents. In literature, multilayer resistive memory topologies have also been inspected to minimize leakage currents. Recently, feasibility of 3D resistive RAMs is also inspected. However, to the best of our knowledge, no one has given equivalent leakage circuit models for complementary resistive switches based 3D resistive RAMs yet. In this study, equivalent leakage circuit models for different layers of a 3D resistive RAM with complementary resistive cells have been given and their leakage resistance and reading margins are compared to that of one layer crossbar memory. Some interesting and crucial results are obtained. Alternative complementary resistive switches based 3D resistive RAM topologies with insulating layer(s) for minimized leakage currents are suggested.en_US
dc.identifier.endpage241en_US
dc.identifier.issn0352-9045
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-84907479208en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage235en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14551/19978
dc.identifier.volume44en_US
dc.identifier.wosWOS:000342172200007en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSoc Microelectronics, Electron Components Materials-Midemen_US
dc.relation.ispartofInformacije Midem-Journal Of Microelectronics Electronic Components And Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectComplementary Resistive Switchesen_US
dc.subject3D Multilayer Resistive RAMen_US
dc.subjectCrossbar Memoryen_US
dc.subjectSneak Path Currentsen_US
dc.titleSneak path current equivalent circuits and reading margin analysis of complementary resistive switches based 3D stacking crossbar memoriesen_US
dc.typeArticleen_US

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