The effect of dielectric constant on binding energy and impurity self-polarization in a GaAs-Ga1-xAlxAs spherical quantum dot

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dc.authorwosidMese, Ali ihsan/JXX-8717-2024
dc.contributor.authorMese, A. I.
dc.contributor.authorCicek, E.
dc.contributor.authorErdogan, I.
dc.contributor.authorAkankan, O.
dc.contributor.authorAkbas, H.
dc.date.accessioned2024-06-12T11:12:33Z
dc.date.available2024-06-12T11:12:33Z
dc.date.issued2017
dc.departmentTrakya Üniversitesien_US
dc.description.abstractThe ground state, 1s, and the excited state, 2p, energies of a hydrogenic impurity in a GaAs-Ga1-xAlxAs spherical quantum dot, are computed as a function of the donor positions. We study how the impurity self-polarization depends on the location of the impurity and the dielectric constant. The excited state anomalous impurity self-polarization in the quantum dot is found to be present in the absence of any external influence and strongly depends on the impurity position and the radius of the dot. Therefore, the excited state anomalous impurity self-polarization can give information about the impurity position in the system. Also, the variation of E-b1s and E-b2p with the dielectric constant can be utilized as a tool for finding out the correct dielectric constant of the dot material by measuring the 1s or 2p state binding energy for a fixed dot radius and a fixed impurity position.en_US
dc.identifier.doi10.1007/s12648-016-0921-y
dc.identifier.endpage268en_US
dc.identifier.issn0973-1458
dc.identifier.issn0974-9845
dc.identifier.issue3en_US
dc.identifier.scopus2-s2.0-85013276159en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage263en_US
dc.identifier.urihttps://doi.org/10.1007/s12648-016-0921-y
dc.identifier.urihttps://hdl.handle.net/20.500.14551/23203
dc.identifier.volume91en_US
dc.identifier.wosWOS:000397920100004en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIndian Assoc Cultivation Scienceen_US
dc.relation.ispartofIndian Journal Of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectPolarizationen_US
dc.subjectHydrogenic Impurityen_US
dc.subjectBinding Energyen_US
dc.subjectSpherical Doten_US
dc.subjectHydrogenic Donor Impurityen_US
dc.subjectDependent Effective-Massen_US
dc.subjectSpatial Electric-Fielden_US
dc.subjectWell-Wiresen_US
dc.subjectHydrostatic-Pressureen_US
dc.subjectMagnetic-Fielden_US
dc.subjectExcited-Statesen_US
dc.subjectAnomalous Polarizationen_US
dc.subjectTransition Energiesen_US
dc.subjectTemperatureen_US
dc.titleThe effect of dielectric constant on binding energy and impurity self-polarization in a GaAs-Ga1-xAlxAs spherical quantum doten_US
dc.typeArticleen_US

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