Yazar "Minez, S." seçeneğine göre listele

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    The effect of magnetic field in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity
    (Elsevier, 2009) Akbas, H.; Dane, C.; Guleroglu, A.; Minez, S.
    Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energies of a hydrogenic donor impurity in a GaAs/AlAs spherical quantum dot, under the action of homogeneous magnetic field (B) over right arrow (0, 0, B) directed along the z-axis. A proper choice of the dot radius and the magnetic field can largely change the normalized binding energy NEbB of a central hydrogenic impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.
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    Electric field effect in a GaAs/AlAs spherical quantum dot
    (Elsevier Science Bv, 2008) Dane, C.; Akbas, H.; Minez, S.; Guleroglu, A.
    Using a variational procedure within the effective-mass approximation we calculate the binding and normalized binding energy (NEbF) of a shallow donor impurity in a GaAs/AlAs spherical quintum dot, under the action of constant uniform electric field applied in the z-direction. A proper choice of the dot radius and electric field call largely change NEbF of a centre shallow impurity in the spherical quantum dot, which may be used to feel the small change in the dot radius. (C) 2008 Elsevier B.V. All rights reserved.
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    Ground state normalized binding energy of impurity in asymmetric quantum wells under hydrostatic pressure
    (Academic Press Ltd- Elsevier Science Ltd, 2016) Akbas, H.; Sucu, S.; Minez, S.; Dane, C.; Akankan, O.; Erdogan, I.
    We have studied and computed variationally the impurity energy, impurity energy turning points, and ground state normalized binding energy as functions of the impurity position for shallow impurity in asymmetric quantum wells under hydrostatic pressure. We found that the normalized binding energy significantly depends on the asymmetry of the well, besides depending on,the impurity position and hydrostatic pressure. Also, the dependence of the positive normalized binding energy on the pressure can be used to find out the degree of the asymmetry of the well or the impurity position in the well. (C) 2016 Elsevier Ltd. All rights reserved.
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    The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot
    (Elsevier Science Bv, 2011) Dane, C.; Akbas, H.; Guleroglu, A.; Minez, S.; Kasapoglu, K.
    A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique. (C) 2011 Elsevier B.V. All rights reserved.
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    Self-polarization of a donor impurity for the first excited state in an Ga1-xAlxAs/GaAs quantum well
    (Indian Assoc Cultivation Science, 2021) Sucu, S.; Minez, S.; Erdogan, I
    In this study, self-polarization (SP) for the first excited state in the finite quantum well is presented by taking into account the hydrostatic pressure and the external electric field. We calculated the SP of the first excited state by using the variational method under the effective mass approximation. These calculations were made for different values of the quantum well-width, hydrostatic pressure, external electric field and impurity positions. Our results indicate that the self-polarization of the first excited state in finite quantum well depends remarkably on the hydrostatic pressure, external electric field strength and impurity position.
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    Simultaneous effects of electric and magnetic fields in a GaAs/AlAs spherical quantum dot with a hydrogenic impurity
    (Elsevier, 2010) Dane, C.; Akbas, H.; Minez, S.; Guleroglu, A.
    In this paper, the effects of electric and magnetic fields on the ground state of a hydrogenic on-centre donor in a GaAs/AlAs spherical quantum dot have been studied. A variational approach within the framework of effective mass approximation is used in the calculations. Overall, the analysis shows that a proper choice of the dot radius and the electric and magnetic fields can largely change the normalized binding energy, which in turn may be used to feel the small change in dot radius and thus detect different magnetic field strengths. (C) 2010 Elsevier B.V. All rights reserved.