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    Combined effects of the hydrostatic pressure and temperature on the self-polarization in a finite quantum well under laser field
    (Academic Press Ltd- Elsevier Science Ltd, 2021) Cicek, E.; Mese, A., I; Ozkapi, B.; Erdogan, I
    In this study, the self-polarization and binding energy of the donor impurity atom in the laser field applied Ga1_xAlxAs/GaAs quantum well are investigated under the combined influence of hydrostatic pressure and temperature. Variation of self-polarization and binding energy depending on temperature, hydrostatic pressure, impurity position, well width and laser field parameters are shown. Using the effective mass approximation, subband energy has been found by finite difference method and impurity energy has been found by variation method. Our results showed that hydrostatic pressure and temperature have a noticeable effect on the calculated selfpolarization and binding energy in a quantum well under the effect of the laser field. We think that the results obtained will be useful in determining the physical properties of the quantum well under the influence of laser field, hydrostatic pressure and temperature.
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    The normalized transition energies between ground (1s) and first excited (1p) states in a GaAs/Ga1-xAlxAs spherical quantum dot (SQD)
    (Academic Press Ltd- Elsevier Science Ltd, 2021) Mese, A., I
    We report the results of the normalized transition energies between 1s and 1p states in a spherical quantum dot with radius R at temperatures T = 0 and T = 300K. Using the normalized transition energy, it is possible to determine the location of an impurity in the SQD under examination by measuring the intradonor transition energy, and to obtain high-resolution maps of the impurity location (ri) for ri < 3R/4 and 1.3 a* < R 1.6 a*. Also, for the impurity location at ri 3R/4, T and R have no influence on the normalized transition energy.