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    Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure
    (Elsevier, 2014) Bulut, P.; Erdogan, I.; Akbas, H.
    By using a variational procedure within the effective mass approximation, we calculated the 2p state binding energy, E-2pha(x,P), and the binding energy turning point, R-2pEbT (X, P) of a hydrogenic donor impurity located at the centre of the GaAs GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R-2pEbT(X, P) is an important factor in dealing with the 2p bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. (C) 2014 Elsevier By. All rights reserved,
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    The diamagnetic susceptibility of hydrogenic donor in two-dimensional semiconductors with anisotropic effective mass of carriers
    (Academic Press Ltd- Elsevier Science Ltd, 2012) Akbas, H.; Bulut, P.; Dane, C.; Skarlatos, Y.
    In this study, the effects of quantum confinement and effective mass anisotropy parameter on the diamagnetic susceptibility of a hydrogenic donor placed in GaAs. Si, and Ge quantum wells with infinite confinement potential are investigated in the effective mass and parabolic band approximations by using two and one parameter trial wave functions. It is observed that the diamagnetic susceptibility of a hydrogenic donor in anisotropic quantum wells is essentially equal to the transverse diamagnetic susceptibility part when well widths are larger than L > 100 angstrom, and the impurity is located at center. Moreover, a two parameter trial wave function model gives higher values of diamagnetic susceptibility, except for chi(z) (GaAs). (C) 2011 Elsevier Ltd. All rights reserved.