Yazar "Arslan, S." seçeneğine göre listele

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  • Küçük Resim Yok
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    Investigation of the coupling asymmetries at double-slit interference experiments
    (Iop Publishing Ltd, 2010) Mese, A. I.; Bilekkaya, A.; Arslan, S.; Aktas, S.; Siddiki, A.
    Double-slit experiments inferring the phase and the amplitude of the transmission coefficient performed at quantum dots (QDs), in the Coulomb blockade regime, present anomalies at the phase changes depending on the number of electrons confined. This phase change cannot be explained if one neglects the electron-electron interactions. Here, we present our numerical results, which simulate the real sample geometry by solving the Poisson equation in 3D. The screened potential profile is used to obtain energy eigenstates and eigenvalues of the QD. We find that, certain energy levels are coupled to the leads stronger compared to others. Our results give strong support to the phenomenological models in the literature describing the charging of a QD and the abrupt phase changes.
  • Küçük Resim Yok
    Öğe
    Modeling of quantum point contacts in high magnetic fields and with current bias outside the linear response regime
    (Amer Physical Soc, 2008) Arslan, S.; Cicek, E.; Eksi, D.; Aktas, S.; Weichselbaum, A.; Siddiki, A.
    The electron and current-density distributions in the close proximity of quantum point contacts (QPCs) are investigated. A three-dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the (deeply) etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the nonlinear regime.